power turn-off
英 [ˈpaʊə(r) tɜːn ɒf]
美 [ˈpaʊər tɜːrn ɔːf]
【计】断电
双语例句
- IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。 - The advance in Power Devices and the Latest Turn-off thyristor
功率器件发展及新型可关断晶闸管 - Influence of Power Transit Line to GTO Turn-off Performance
功率传输线对GTO关断性能的影响 - High Power Gate Turn-Off Thyristor ( GTO)
大功率可关断晶闸管（GTO） - Study of power gate turn-off thyristor
大容量门极可关断晶闸管的研究 - A single switch and uncontrolled three-phase rectified bridges are used to obtain the high power factor and low harmonic input current. A small Cuk capacitor is used to obtain the zero-current turn-on and zero-voltage turn-off of the switching.
该电路采用单开关和三相整流桥实现高功率因数和低谐波电流输入，同时在后级Cuk变换器中采用小容量的过渡电容，使得开关工作在零电流开通和零电压分断。 - Gate commutated thyristor ( GCT) is a new high power semiconductor devices based on Gate turn-off thyristor ( GTO), GCT has extensive application foreground and it is a blank in interiorly now.
门极换流晶闸管（GCT）是在GTO的基础上开发的一种新型大功率半导体器件，有广阔应用的前景，目前在国内尚属空白。 - In the part of power devices with IGBT, the loss can be divided into four parts: conduction loss, off-state loss, turn-on loss and turn-off loss.
采用IGBT作为主功率开关元件，由功率开关元件引起的损耗主要有导通损耗、断态损耗、开通损耗和关断损耗。 - The control signals amplified by floating channel bootstrap drive circuits, then provide gate drive to Power MOSFET, through turn-on and turn-off the switches, to realize inverter.
由单片机发出的控制信号，经自举式浮充电路放大后给电力场效应管提供栅极驱动，通过开关器件的导通与关断，实现对直流电的逆变过程。